Ion Implantation Tool
iPulsar, Advanced USJ Enabler
300mm
Dual Beam/Scan Mode
Beam optics enables tunable beam shape based on process and productivity requirements.
Spot beam with 2D scan delivers superior process performance for ultra low energy (ULE) applications.
Tall beam with 1D scan delivers high productivity for typical high current implantation applications.
Patented multipole design enables spot or tall beam formation without hardware change.
Chicane
TM
Decel
Patented design with dual bend energy filter and multi-stage deceleration allows high beam currents with <0.05% energy contamination.
The electric potentials limit the maximum energy contamination.
Enables high productivity ultra low energy implants with high decel ratio and low energy contamination.
Sub-zero Implant Capability
Integrated design with closed loop control does not require extra facility to achieve low temperature.
Most efficient sub-zero implant solution for mass-production.
Implant defects reduction for advanced devices.
iPulsar's design benefits are proven in leading edge technology mass production
* Enable USJ formation with superior leakage current performance
* Energy contamination control, micro-uniformity control, angle control
* Allow matching flexibility to fab incumbent
* Allow device performance optimization with throughput consideration
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